The plurality of thermal conductive plates 3 are patterned in the form of a two-dimensional array, and a plurality of the spherical silicon balls formed thereon are also formed in the form of a two-dimensional array.
The heat conduction plate 3 formed under each of the spherical silicon balls of the spherical silicon ball array 1 is formed in a plate shape with metal materials such as aluminum, copper, tin, and stainless steel. The thermal conductive plate 3 is excellent in thermal conductivity and can dissipate internal heat of the solar module to the outside. Each spherical silicon ball 1 forms polycrystalline silicon in a spherical shape, followed by N-type impurities eg, gallium Ga , indium In , boron B , etc.
For example, here, as a method of forming polycrystalline silicon into a spherical shape, a shadow mask or the like having through-holes corresponding to the spherical silicon ball array 1 is placed on a substrate on which the thermal conductive plate 3 is formed, and predetermined semiconductor deposition such as CVD is performed. A method of depositing polycrystalline silicon using a method may be used.
The substrate 10 is made of a material on which a spherical silicon ball array 1, a reflector array 2, and a heat conduction plate 3 can be formed thereon, for example, a material such as glass, ceramic, metal, plastic, or the like. It may be made of.
Each spherical silicon ball 1 converts solar light reflected and collected by the reflector array 2 into electrical energy. That is, the spherical silicon ball 1, which is a solar cell having a PN junction structure, generates electromotive force while free electrons of silicon move when sunlight is irradiated, and converts sunlight into electric energy.
In the present invention, using a spherical silicon ball 1 having a spherical shape compared to the conventional plate-like structure, so that when the sunlight coming from the reflector array 2 in the forward direction is incident, it is possible to efficiently generate electrical energy It was.
The reflector array 2 includes respective reflectors formed between the spherical silicon balls of the spherical silicon ball array 1, and includes a plurality of reflectors formed in a two-dimensional array to reflect and collect sunlight to surrounding spherical silicon balls. And reflectors. Each reflector 2 is formed of a metallic material such as mirror aluminum, mirror stainless steel, etc. Here, as shown in FIG.
May be. As such, after each reflector 2 is formed of a metallic material, the outer cover may be further coated with a reflective metallic material for further increasing light reflection. As shown in FIG. As an example, each reflector 2 may be in the form of a cone. Each reflector of the reflector array 2 is located between the spherical silicon balls of the spherical silicon ball array 1, ie in the center of the spherical silicon balls, and each reflector 2 is spherical in all directions as shown in FIG.
By reflecting and condensing sunlight into the silicon balls 1, the electrical energy conversion efficiency of the spherical silicon balls 1 can be improved. After the spherical silicon ball array 1 and the reflector array 2 are formed, a protective layer 4 of a polymer material for protection from the outside is formed on the entire upper portion thereof.
The protective layer 4 of the polymer material is formed such that the thickness from the substrate 10 is about 3 mm to 7 mm. The schedule can be changed by editing reflector. First edit the configuration file as described in systemd service. After you have updated the configuration file, start and enable reflector.
To refresh the mirrorlist ahead of schedule, start reflector. This section is being considered for removal. You can create a pacman hook that will start reflector. This is also provided by reflector-mirrorlist-update AUR. Run Keygen and select the desired tool in the Program Selection section and select one of the two methods in the Licensing method section. In the Edition Selection section, select the desired version, which is usually the best and most complete at the bottom of the slider, and click Generate.
Copy the generated serial in the relevant section on the tool activation page and click on Activate, and after not connecting to the Internet, click on Activate Manually and then on Save to File and save the activation. In the Keygen window, click Load from File and enter the file saved in the previous step. Apparently, other tools that are not in the list supported by Keygen can be activated in the same way. Download Red Gate. Net Reflector 9. In particular, the matrix material is transmissive, especially transparent to radiation.
The reflectivity of the reflector can be adjusted in particular by the distribution and concentration of the light-reflecting particles. The reflector can have a matrix material such as an epoxy or silicone. Alternatively, the matrix material can be a thermoplastic material or a ceramic material. In this case, the reflectivity of the reflector can be increased by adding reflective fillers. The first and second subregions of the reflector are manufactured in different process steps.
The first and second subregions can have a common interface observable in the finished component. The first and second subregions can have the same or different material compositions. The envelope may have a surface facing away from the semiconductor chip, which is convex at least in regions.
For example, this surface can take the form of a surface of an optical element such as a lens. It is also possible that, to enhance light extraction, the surface of the envelope facing away from the semiconductor chip has depressions and elevations in regions.
The surface can also have other shapes. In a plan view, the envelope can cover the semiconductor chip completely and the reflector at least partially or completely.
The envelope can contain phosphor particles or be free of phosphor particles. In particular, the envelope is made of a casting material transparent to radiation emitted by the semiconductor chip or radiation converted by the phosphor particles during operation of the component.
In our method of producing one or a plurality of components, a plurality of semiconductor chips may be provided. The semiconductor chips can be arranged on an auxiliary carrier in a plurality of rows and columns. A common reflector is applied to the areas between the rows and columns of the semiconductor chips such that the semiconductor chips are enclosed by the common reflector in the lateral directions. A common envelope is applied to the semiconductor chips and the common reflector such that the common envelope completely covers the semiconductor chips in a plan view.
After forming the envelope, the components are singulated by separating the common reflector in the areas between the rows and columns of the semiconductor chips so that the singulated components each have at least one semiconductor chip, one reflector and one envelope.
The reflector and the envelope of the respective component thus emerge from the common reflector and the common envelope, respectively. The auxiliary carrier on which the semiconductor chips are arranged can be removed from the components prior to, during or after the singulation step.
The common reflector may be provided at least partially prefabricated. For example, the common, in particular contiguous reflector has a plurality of open cavities, wherein the semiconductor chips can be arranged in each of the open cavities. Such cavities are particularly free of a bottom surface. The semiconductor chips arranged in the open cavities can thus be electrically contacted throughout the common reflector. The cavities each have side walls formed as the first subregions of the individual reflectors of the respective components to be produced.
After the common reflector has been applied to the areas between the rows and columns such that the semiconductor chips are arranged in the cavities of the common reflector, the common reflector can subsequently be mechanically fixed to the semiconductor chips. For example, a reflector material is used to form a mechanical connection between the respective semiconductor chip and the respective first subregion of the associated reflector. The reflector material forms in particular the second subregion of the associated reflector.
The reflector material can partially cover the side surfaces of the semiconductor chip. The reflector material can be formed such that it directly adjoins in particular the first subregion of the associated reflector, which is laterally spaced apart from the semiconductor chip. The envelope can be formed such that it adjoins the semiconductor chips as well as the common reflector, wherein the mechanical stability of the components to be produced is additionally increased. The envelope may contain phosphor particles embedded in a casting layer of the envelope.
The phosphor particles can be evenly distributed within the envelope, especially within the casting layer. It is also possible that the envelope contains a converter layer containing phosphor particles, wherein the converter layer differs from the casting layer or is located in an area of the casting layer adjoining the semiconductor chip.
For example, the phosphor particles are applied to the semiconductor chips by spray coating or sedimentation or applying a prefabricated converter foil. In sedimentation, the phosphor particles can be located in the same matrix material of the casting layer. However, the phosphor particles have an increased concentration in the immediate vicinity of the semiconductor chip.
In this case, the matrix material of the casting layer comprising the phosphor particles embedded therein forms the converter layer. Alternatively, it is also possible that the converter layer is free of a matrix material of the casting layer and therefore differs from the casting layer.
The phosphor particles can be arranged exclusively within the converter layer. In particular, the component is free of a separation layer located between the semiconductor chip and a layer containing the phosphor particles. In this case, the component is based on the principle of chip-neighboring conversion.
The common reflector may be formed by sequential application of material layers around the individual semiconductor chips. The material layers can be formed such that the reflector has an increasing vertical height with increasing distance from the corresponding semiconductor chip. In particular, some of the material layers can be formed such that the material layers having a smaller distance to a corresponding semiconductor chip have a lower vertical height than the material layers having a larger distance to the corresponding semiconductor chip.
To achieve a growing vertical height of the reflector at a greater distance from the semiconductor chip, the material layers can be partly arranged one above the other. The method described above is particularly suitable for the production of one or a plurality of components described here.
Features described in connection with the component can therefore also be used for the method and vice versa. Further advantages, preferred configurations and further developments of the component and of the method will become apparent from the examples explained below in conjunction with FIGS. Identical, equivalent or equivalently acting elements are indicated with the same reference numerals in the figures. The figures are schematic representations and thus not necessarily true to scale.
Rather, comparatively small elements and particularly layer thicknesses can be illustrated exaggeratedly large for the purpose of better illustration.
The component has a semiconductor chip 1 , a reflector 2 and an envelope 3. The reflector 2 is arranged as a frame-like structure around the semiconductor chip 1.
In lateral directions, the semiconductor chip 1 is fully enclosed by the reflector 2. In a plan view, the envelope 3 completely covers the semiconductor chip 1. The reflector 2 is also covered by the envelope 3. The component has a front side and a rear side facing away from the front side During operation of the component , the semiconductor chip 1 is configured to generate electromagnetic radiation.
The front side of the component serves in particular as the radiation exit side of the component In particular, the component is formed as a surface-mountable device.
This means that the component can be electrically contacted externally, in particular via its rear side According to FIG. The contact layers 41 and 42 are freely accessible, especially on the rear side of the component so that the semiconductor chip 1 or the component can be electrically connected to an external power source at the rear side 12 or The semiconductor chip 1 has a front side 11 facing away from the rear side In particular, the semiconductor chip 1 is formed as a volume emitter.
This means that during operation of the component the semiconductor chip 1 can emit electromagnetic radiation that can exit from the semiconductor chip 1 particularly at the front side 11 and at the side surfaces The semiconductor chip 1 as shown in FIG. In particular, the semiconductor chip is a flip-chip such as a sapphire flip-chip.
The reflector 2 shown in FIG. The first subregion 21 and the second subregion 22 may have the same material composition or different material compositions. In particular, the first subregion 21 and the second subregion 22 are produced by different process steps. In particular, the first subregion 21 encloses the semiconductor chip 1 in a frame-like manner, wherein the first subregion 21 is spatially spaced apart from the semiconductor chip in the lateral direction.
The first subregion 21 thus forms a cavity in which the semiconductor chip 1 is arranged. This cavity, as shown in FIG. The side walls of the cavity run in particular obliquely to the rear side of the component so that electromagnetic radiation that hits the side walls of the cavity can be reflected back in the direction of the front side of the component.
In the lateral direction, the second subregion 22 of the reflector 2 is located between the semiconductor chip 1 and the first subregion In particular, the second subregion 22 adjoins both the semiconductor chip 1 and the first subregion 21 so that the second subregion 22 serves for instance as a connection layer.
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